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UTC MCR101
SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS
DESCRIPTION
PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive plastic TO-92 package which is readily adaptable for use in automatic insertion equipment.
1
SCR
TO-92
DESCRIPTION
*Sensitive Gate Allows Triggering by Micro controllers and Other Logic circuits *Blocking Voltage to 600V *On-State Current Rating of 0.8A RMS at 80C *High Surge Current Capability - 10A *Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design *Immunity to dV/dt - 20V/sec Minimum at 110C *Glass-Passivated Surface for Reliability and Uniformity 1: GATE 2: ANODE 3:CATHODE:
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Lead Solder Temperature (<1/16" from case, 10 secs max)
SYMBOL
RJC RJA TL
MAX
75 200 260
UNIT
C/W C/W C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak Repetitive Off-State Voltage(note) (TJ=-40 to 110C, Sine Wave, 50 to 60Hz; Gate Open) MCR101-4 MCR101-6 MCR101-8 On-Sate RMS Current (Tc=80C) 180 Condition Angles Peak Non-Repetitive Surge Current (1/2 cycle, Sine Wave, 60Hz, TJ=25C)
SYMBOL
VDRM,VRRM
MAX
UNIT
V
200 400 600 IT(RMS) ITSM 0.8 10 A A
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R301-009,B
UTC MCR101
PARAMETER
Circuit Fusing Considerations (t=8.3 ms) Forward Peak Gate Power (TA=25C, Pulse Width 1.0s) Forward Average Gate Power (TA=25C, t=8.3ms) Peak Gate Current - Forward (TA=25C, Pulse Width1.0s) Peak Gate Voltage - Reverse (TA=25C, Pulse Width1.0s) Operating Junction Temperature Range @ Rated VRRM and VDRM
SCR
SYMBOL
I2t PGM PG(AV) IGM VGRM TJ
MAX
0.415 0.1 0.1 1 5 -40 to +110
UNIT
A2s W W A V C
Storage Temperature Range Tstg -40 to +150 C Note: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
ELECTRICAL CHARACTERISTICS (Tj=25C, unless otherwise stated)
PARAMETER
OFF CHARACTERISTICS Peak Forward or Reverse Blocking Current Tc=25C Tc=125C ON CHARACTERISTICS Peak Forward On-State Voltage (Note1) Gate Trigger Current (Continuous dc)(note2) Holding Current (note 3) Tc=25 C Tc=-40 C Latch Current Gate Trigger Current (continuous dc) (Note 2) Tc=25 C Tc=-40 C Tc=25 C Tc=-40 C VD=Rated VDRM, Exponential Waveform, RGK=1000, TJ=110C IPK=20A; Pw=10sec; diG/dt=1A/sec, Igt=20mA dV/dt di/dt 20 ITM=1A Peak @ TA=25C VAK=7Vdc, RL=100, TC=25C VAK=7Vdc, initiating current=20mA VAK=7V, Ig=200A VAK=7Vdc, RL=100 VTM IGT IH IL VGT 0.62 0.8 1.2 V/s 50 A/s 40 0.5 0.6 1.7 200 5 10 10 15 V A mA mA V VD=Rated VDRM and VRRM; RGK=1k IDRM, IRRM 10 100 A A
TEST CONDITION
SYMBOL
MIN TYP MAX UNIT
DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off-State Voltage Critical Rate of Rise of On-State Current 35
Notes: 1. Indicates Pulse Test Width1.0ms, duty cycle 1% 2. RGK=1000 included in measurement. 3. Does not include RGK in measurement.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R301-009,B
UTC MCR101
VOLTAGE CURRENT CHARACTERISTIC OF SCR
SYMBOL VDRM IDRM VRRM IRRM VTM IH PARAMETER Peak Repetitive Off Stat Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current
SCR
CLASSIFICATION OF IGT
RANK RANGE B 48~105A C 95~200A AA 8~16A AB 14~21A AC 19~25A AD 23~52A
UTC
UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R301-009,B
UTC MCR101
SCR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
4
QW-R301-009,B

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